HIGH-RATE BARRIER POLISHING COMPOSITION

摘要

Provided are a barrier polishing composition to remove a barrier from a semiconductor wafer with an increased barrier removing ratio and a reduced dielectric layer removing ratio, and a method for removing a barrier from a semiconductor wafer by using the composition. The barrier polishing composition comprises 0.01-25 wt% of an oxidant; 0-15 wt% of an inhibitor for an iron-free metal; 0-15 wt% of an abrasive; 0-20 wt% of an iron-free complexing agent; 0.01-12 wt% of a barrier remover selected from the group consisting of an imine derivative compound, a hydrazine derivative compound and their mixture; and the balance of water. Also the barrier polishing composition comprises 0.01-15 wt% of an oxidant; 0-10 wt% of an inhibitor for an iron-free metal; 0-10 wt% of an iron-free complexing agent; 0-10 wt% of an abrasive; 0.1-10 wt% of a barrier remover selected from the group consisting of acetamidine, an acetamidine salt, an acetamidine derivative, arginine, an arginine salt, an arginine derivative, formamidine, a formamidine salt, a formamidine derivative, a guanidine derivative, a guanidine salt and their mixtures; 0.01-10 wt% of an organic material-containing ammonium salt represented by R1-N+-R2(R3)(R4) (wherein R1, R2, R3 and R4 are a radical and R1 has a carbon chain length less than C15); and the balance of water.