SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor device and a manufacturing method thereof are provided to prevent the crack of an insulating layer under a pad electrode due to the stress applied to the pad electrode by using a third metal pattern. A first insulating layer, a first metal pattern, a second insulating layer and a second metal pattern are sequentially formed on a semiconductor substrate(101). A third metal pattern(119) for connecting the first metal pattern with the second metal pattern is formed in the second insulating layer. The third metal pattern is a continuous structure.