发明名称 |
POROUS SUBSTRATE AND ITS MANUFACTURING METHOD, AND GAN SEMICONDUCTOR MULTILAYER SUBSTRATE AND ITS MANUFACTURING METHOD |
摘要 |
A structure of a substrate used for growing a crystal layer of a semiconductor, particularly a group-III nitride semiconductor and its manufacturing method. The substrate comprises two porous layers on a base. The mean opening diameter of the pores of the first porous laser, the outermost layer, is smaller than the means diameter of the pores in the second porous layer nearer to the base than the first porous layer. The first and second porous layers have volume porosities of 10 to 90%. More than 50% of the pores of the first porous layer extend from the surface of the first porous layer and reach the interface between the first and second porous layers. Even by a conventional crystal growing method, an epitaxial crystal of low defect density can be easily grown on the porous substrate.
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申请公布号 |
KR20050030626(A) |
申请公布日期 |
2005.03.30 |
申请号 |
KR20047021383 |
申请日期 |
2004.12.28 |
申请人 |
HITACHI CABLE, LTD. |
发明人 |
ERI, TAKESHI;OSHIMA, YUICHI;SHIBATA, MASATOMO;SUNAGAWA, HARUO;USUI, AKIRA |
分类号 |
C30B29/38;C23C16/34;C30B25/02;C30B25/18;H01L21/205;(IPC1-7):C30B29/38 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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