发明名称 |
Silicon controlled rectifier ESD structures with trench isolation |
摘要 |
A novel device structure and process are described for an SCR ESD protection device used with shallow trench isolation structures. The invention incorporates polysilicon gates bridging SCR diode junction elements and also bridging between SCR elements and neighboring STI structures. The presence of the strategically located polysilicon gates effectively counters the detrimental effects of non-planar STI "pull down" regions as well as compensating for the interaction of silicide structures and the effective junction depth of diode elements bounded by STI elements. Connecting the gates to appropriate voltage sources such as the SCR anode input voltage and the SCR cathode voltage, typically ground, reduces normal operation leakage of the ESD protection device.
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申请公布号 |
US6872987(B2) |
申请公布日期 |
2005.03.29 |
申请号 |
US20030462287 |
申请日期 |
2003.06.16 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO. |
发明人 |
YU TA-LEE |
分类号 |
H01L21/332;H01L27/02;H01L29/74;H01L31/111;(IPC1-7):H01L29/74 |
主分类号 |
H01L21/332 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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