发明名称 |
CMOS-type thin film semiconductor device and method of fabricating the same |
摘要 |
In the fabrication of a CMOS-TFT, non-selectively doping (for both of p- and n-type TFTs) and selectively doping (only for the n-type TFT) with p-type impurities (B: boron) are successively performed at very low concentrations to control the threshold voltages (Vthp and Vthn). More specifically, the Id-Vg characteristics of the p- and n-type TFTs are initially negatively shifted. In this state, non-selectively doping is performed positively to shift the p- and n-type TFTs first to adjust the Vthp to a specified value. Selectively doping is then performed positively to shift only the n-type TFT to adjust the Vthn to a specified value. The threshold voltages of the p- and n-type TFTs constructing the CMOS-TFT can be independently and efficiently (with minimum photolithography) controlled with high accuracy.
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申请公布号 |
US6872978(B2) |
申请公布日期 |
2005.03.29 |
申请号 |
US20030664146 |
申请日期 |
2003.09.17 |
申请人 |
FUJITSU DISPLAY TECHNOLOGIES CORPORATION |
发明人 |
ZHANG HONGYONG;IGARASHI MAKOTO |
分类号 |
H01L27/092;G02F1/136;G02F1/1368;H01L21/336;H01L21/77;H01L21/8238;H01L21/84;H01L27/08;H01L27/12;H01L29/786;(IPC1-7):H01L21/823;H01L31/039 |
主分类号 |
H01L27/092 |
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