发明名称 Method of processing substrate, method of forming film, and method and apparatus for manufacturing electron source
摘要 To attain an increase in production speed and suitable for mass production in a substrate processing operation such as film formation requiring a hermetic atmosphere. A substrate processing method for performing a predetermined processing on a substrate is provided, which includes the steps of: arranging a surface of the substrate to be processed in a hermetic atmosphere; evacuating said hermetic atmosphere; and performing a predetermined processing on the substrate, in which the processing step is conducted after moving the evacuated hermetic atmosphere from the station for evacuation to a ifferent station.
申请公布号 US6872112(B2) 申请公布日期 2005.03.29
申请号 US20020152827 申请日期 2002.05.23
申请人 CANON KABUSHIKI KAISHA 发明人 OTA JIRO
分类号 C23C16/44;C23C16/54;H01J9/02;(IPC1-7):H01J9/00;H01J9/46;H01J9/48 主分类号 C23C16/44
代理机构 代理人
主权项
地址