发明名称 |
Method of processing substrate, method of forming film, and method and apparatus for manufacturing electron source |
摘要 |
To attain an increase in production speed and suitable for mass production in a substrate processing operation such as film formation requiring a hermetic atmosphere. A substrate processing method for performing a predetermined processing on a substrate is provided, which includes the steps of: arranging a surface of the substrate to be processed in a hermetic atmosphere; evacuating said hermetic atmosphere; and performing a predetermined processing on the substrate, in which the processing step is conducted after moving the evacuated hermetic atmosphere from the station for evacuation to a ifferent station.
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申请公布号 |
US6872112(B2) |
申请公布日期 |
2005.03.29 |
申请号 |
US20020152827 |
申请日期 |
2002.05.23 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
OTA JIRO |
分类号 |
C23C16/44;C23C16/54;H01J9/02;(IPC1-7):H01J9/00;H01J9/46;H01J9/48 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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