发明名称 |
System and method for integrating multiple metal gates for CMOS applications |
摘要 |
A dual-gate MOSFET with metal gates and a method for setting threshold voltage in such a MOSFET is provided. The method comprises: forming a gate oxide layer overlying first and second channel regions; forming a first metal layer having a first thickness overlying the gate oxide layer; forming a second metal layer having a second thickness overlying the first metal layer first thickness; selectively removing the second metal layer overlying the first channel region; forming a third metal layer; establishing a first MOSFET with a gate work function responsive to the thicknesses of the first and third metal layer overlying the first channel region; and, establishing a second MOSFET, complementary to the first MOSFET, with a gate work function responsive to the combination of the thicknesses of the first, second, and third metal layers overlying the second channel region.
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申请公布号 |
US6873048(B2) |
申请公布日期 |
2005.03.29 |
申请号 |
US20030376795 |
申请日期 |
2003.02.27 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
GAO WEI;CONLEY, JR. JOHN F.;ONO YOSHI |
分类号 |
H01L21/28;H01L21/336;H01L21/8238;H01L27/092;H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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