发明名称 |
Method of manufacturing semiconductor device |
摘要 |
A gate structure (4), an LDD region (6) and a sidewall (7) are provided in this order. Arsenic ions (8) are thereafter implanted into the upper surface of a silicon substrate (1) by tilted implantation. The next step is annealing for forming an MDD region (9) in the upper surface of the silicon substrate (1). The MDD region (9) and the gate structure (4) do not overlap one another in plan view. Further, the MDD region (9) formed into a depth shallower than that of the LDD region (6) is higher in concentration than the LDD region (6). Thereafter a source/drain region (11) higher in concentration than the MDD region (9) is provided by vertical implantation into a depth greater than that of the LDD region (6).
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申请公布号 |
US6872628(B2) |
申请公布日期 |
2005.03.29 |
申请号 |
US20020245353 |
申请日期 |
2002.09.18 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
SHIRAHATA MASAYOSHI;NISHIDA YUKIO |
分类号 |
H01L21/265;H01L21/336;H01L21/8238;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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