发明名称 |
High capacity MRAM memory array architecture |
摘要 |
A magnetic memory is disclosed. The magnetic memory includes a first magnetic tunneling junction and a reference magnetic tunneling junction. The first magnetic tunneling junction includes a first ferromagnetic layer, a second ferromagnetic layer and a first insulating layer between the first ferromagnetic layer and the second ferromagnetic layer. The reference magnetic tunneling junction includes a third ferromagnetic layer, a fourth ferromagnetic layer and a second insulating layer between the third ferromagnetic layer and the fourth ferromagnetic layer. The magnetic memory also includes means for comparing a first output of the first magnetic tunneling junction with a reference output of the reference magnetic tunneling junction.
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申请公布号 |
US6873547(B1) |
申请公布日期 |
2005.03.29 |
申请号 |
US20020080396 |
申请日期 |
2002.02.22 |
申请人 |
READ RITE CORPORATION |
发明人 |
SHI XIZENG(STONE);TONG HUA-CHING;MENON ARIC K. |
分类号 |
G11C11/15;G11C11/16;(IPC1-7):G11C11/15 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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