FABRICATION METHOD OF THIN FILM NTC THERMISTOR FOR DETECTING INFRARED RADIATION

摘要

A fabricating method of a thin film NTC thermistor for detecting infrared radiation is provided to form a membrane structure of a fully thermal isolation type by removing fully silicon by using an ONO silicon wafer as a substrate. An NTC thin film(120) is deposited on an upper surface of an ONO silicon wafer which is formed by depositing ONO layers(114,116) as laminations of SiO2/Si3N4/SiO2 on both sides of a silicon wafer(110). A window(118) for etching silicon is formed by etching the ONO layer(116) deposited on a bottom surface of the silicon wafer(110). An electrode(130) connected to the NTC thin film(120) is formed on the upper surface of the ONO silicon wafer. A silicon etching process through the window(118) is performed to form a membrane structure formed with only the ONO layer(114) deposited on the upper surface of the silicon wafer(110).