FABRICATING METHOD OF SEMICONDUCTOR DEVICE

摘要

A method of fabricating a semiconductor device is provided to improve electrical characteristics by preventing diffusion of ions from a lightly doped drain structure and a source/drain to a halo region and other regions. A gate insulating layer(103) and a gate electrode(104) are formed on a semiconductor substrate(101). First conductive type impurity ions are implanted into the entire surface of the semiconductor substrate and a halo region is formed within a predetermined part of the semiconductor substrate corresponding to a diffusion barrier ion region. A diffusion barrier ion region(106) is formed by implanting diffusion barrier ions into the entire surface of the semiconductor substrate. A lightly doped drain region is formed by implanting second conductive type impurity ions into the semiconductor substrate of left and right sides of the gate electrode.