发明名称 Methods of forming ferroelectric capacitors with metal oxide for inhibiting fatigue
摘要 A method of forming a ferroelectric capacitor includes forming a lower electrode on a substrate. The lower electrode is oxidized to form a metal oxide film. A ferroelectric film is formed on the metal oxide film while reduction of the oxygen content of the metal oxide film is inhibited. An upper electrode is formed on the ferroelectric film.
申请公布号 US6872618(B2) 申请公布日期 2005.03.29
申请号 US20030464993 申请日期 2003.06.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE MOON-SOOK;PARK KUN-SANG
分类号 H01L27/108;H01L21/02;H01L21/316;H01L21/8246;H01L27/115;(IPC1-7):H01L21/823 主分类号 H01L27/108
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