发明名称 |
Methods of forming ferroelectric capacitors with metal oxide for inhibiting fatigue |
摘要 |
A method of forming a ferroelectric capacitor includes forming a lower electrode on a substrate. The lower electrode is oxidized to form a metal oxide film. A ferroelectric film is formed on the metal oxide film while reduction of the oxygen content of the metal oxide film is inhibited. An upper electrode is formed on the ferroelectric film.
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申请公布号 |
US6872618(B2) |
申请公布日期 |
2005.03.29 |
申请号 |
US20030464993 |
申请日期 |
2003.06.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE MOON-SOOK;PARK KUN-SANG |
分类号 |
H01L27/108;H01L21/02;H01L21/316;H01L21/8246;H01L27/115;(IPC1-7):H01L21/823 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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