FABRICATION METHOD OF SEMICONDUCTOR DEVICE

摘要

A method of fabricating a semiconductor device is provided to form a photoresist layer pattern having a fine lie width by performing an isotropic etch process using a CDE(Chemical Dry Etching) apparatus. A film is formed on an upper surface of a semiconductor substrate(1). A photoresist layer pattern(5) is formed on an upper surface of the film. The photoresist layer pattern is etched by a chemical dry-etch method. A pattern having a width narrower than a width of the photoresist layer pattern is formed by etching the photoresist layer pattern. The exposed film is etched by using the chemically dry-etched photoresist layer pattern as a mask.