发明名称 METHOD FOR MANUFACTURING CAPACITOR
摘要 A method of fabricating a capacitor is provided to prevent a bridge between a top metal layer and a bottom metal layer by forming an interlayer dielectric between the top metal layer and a dielectric layer. A bottom metal layer and a dielectric layer are formed on an upper surface of a first interlayer dielectric. A second interlayer dielectric is formed on the dielectric layer by using an MIM-1 mask. A top metal layer(16) is formed on the second interlayer dielectric and the dielectric layer by using an MIM-2 mask. A third interlayer dielectric is formed on an upper surface of a substrate including the top metal layer.
申请公布号 KR20050029893(A) 申请公布日期 2005.03.29
申请号 KR20030066157 申请日期 2003.09.24
申请人 DONGBUANAM SEMICONDUCTOR INC. 发明人 KIM, TAE WOO
分类号 H01L27/108;(IPC1-7):H01L27/108 主分类号 H01L27/108
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