发明名称 |
METHOD FOR MANUFACTURING CAPACITOR |
摘要 |
A method of fabricating a capacitor is provided to prevent a bridge between a top metal layer and a bottom metal layer by forming an interlayer dielectric between the top metal layer and a dielectric layer. A bottom metal layer and a dielectric layer are formed on an upper surface of a first interlayer dielectric. A second interlayer dielectric is formed on the dielectric layer by using an MIM-1 mask. A top metal layer(16) is formed on the second interlayer dielectric and the dielectric layer by using an MIM-2 mask. A third interlayer dielectric is formed on an upper surface of a substrate including the top metal layer.
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申请公布号 |
KR20050029893(A) |
申请公布日期 |
2005.03.29 |
申请号 |
KR20030066157 |
申请日期 |
2003.09.24 |
申请人 |
DONGBUANAM SEMICONDUCTOR INC. |
发明人 |
KIM, TAE WOO |
分类号 |
H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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