CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME

摘要

A CMOS image sensor and a fabricating method thereof are provided to reduce dark current by separating an impurity diffusion region for photodiode from an isolation layer. A semiconductor substrate(10) includes an active region and a field region. A transistor is formed on an upper surface of the semiconductor substrate. An impurity diffusion region for photodiodes is formed on the semiconductor substrate in order to separate a boundary of the transistor from a boundary of the isolation region. The semiconductor substrate is a P++ type silicon substrate having a P type epitaxial layer. The impurity diffusion region for photodiodes includes an n- type diffusion region(211) and a P^0 type diffusion region(213).