CHEMICAL MECHANICAL POLISHING APPARATUS AND METHOD

摘要

A CMP(Chemical Mechanical Polishing) apparatus and a CMP method are provided to improve the reliability of the CMP process by increasing the polishing amount of an edge part in comparison with a center part of a semiconductor substrate. A rotatory plate(220) includes a polishing pad(221) arranged thereon. A carrier head(210) is arranged on a top side of the rotatory plate in order to support a semiconductor substrate. A carrier head rotation unit is mechanically connected to the carrier head in order to rotate the carrier head. A polishing solution injection unit(230) is arranged at the top side of the rotatory plate in order to inject the polishing solution into the polishing pad. A pad conditioner(240) is used for controlling a state of the polishing pad. A linear reciprocating part(215) is mechanically connected to the carrier head in order to reciprocate the carrier head.