| 摘要 |
A CMOS image sensor and a fabricating method thereof are provided to prevent a short channel effect and restrain generation of leakage current by forming an ion implantation barrier on the gate electrode. A gate insulating layer(403a) and a conductive layer are laminated on a semiconductor substrate(401). Ann insulating layer for preventing implantation of ions is formed on the conductive layer. An ion implantation barrier(405a), a gate electrode(404a), and a gate insulating layer are formed by patterning the gate insulating layer, the conductive layer, and the insulating layer. A photoresist layer is formed thereon. A second photoresist layer pattern(407) is formed to define a photodiode region by patterning selectively the photoresist layer. A lightly doped region is formed by implanting low-density impurity ions into the substrate.
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