CMOS IMAGE SENSOR AND ITS FABRICATING METHOD

摘要

A CMOS Image sensor and a fabricating method thereof are provided to prevent defects due to ion implantation by restraining implantation of impurity ions to a substrate corresponding to an interface between an isolation layer and an active region. An isolation layer(406a) is used for defining a photodiode region of an active region and is projected as much as a predetermined thickness from a surface of a substrate. A sacrificial oxide layer(402) is formed on the surface of the substrate corresponding to a left side and a right side of the isolation layer. An ion implantation prevention layer(407a) is in contact with a barrier rib of the isolation layer and is formed on the sacrificial oxide layer. The ion implantation prevention layer is formed with a nitride layer.