| 摘要 |
Provided are a polymer, its preparation method, an organic bottom antireflective coating layer composition containing the polymer, and an antireflective coating layer to prevent the reflection of a substrate layer below a photoresist layer for forming a hyperfine circuit during the exposure process using a deep UV of 250 nm or less in the photolithography of a highly integrated semiconductor prepared from the composition. The polymer is represented by the formula 1, wherein R is a benzoin ether, acetophenone or anthracene derivative of an aromatic carbonyl; R1 is H, a C1-C6 alkyl group, a C1-C6 alkoxyalkyl group or a C1-C6 hydroxyalkyl group; R2 is a protected maleimide or furyl group; X is H, a carboxyl group, a hydroxyl group, a furoyl group or a cyanato group; Y is a C1-C6 alkyl group or a phenyl group; x is 0.1-0.5; y is 0-0.6; z is 0-0.3; p is 0.01-0.3; x+y+z+p = 1; and q is an integer of 1-6. Preferably the polymer has a weight average molecular weight of 10,000-100,000.
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