| 摘要 |
A method of fabricating a semiconductor device is provided to improve productivity and increase a degree of integration by simplifying a fabrication process. A P-well and an N-well are formed on a semiconductor substrate(201). A gate insulating layer(204) and a gate electrode material are stacked on the entire surface of the semiconductor substrate. An ion permeation barrier is formed on the gate electrode material. The semiconductor substrate is partially exposed by patterning selectively the gate insulating layer, the gate electrode material, and the ion permeation barrier. Ions are implanted into the entire surface of the semiconductor substrate. An isolation layer(210) is formed by performing a thermal process. A gate electrode(205a) is formed by patterning selectively the gate electrode material. A low-density ion implantation layer is formed by implanting low-density impurity ions into the entire surface of the semiconductor substrate. A spacer(212) is formed at a left side and a right side of a sidewall of the gate electrode. A source/drain is formed by implanting high-density ions into the entire surface of the semiconductor substrate.
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