| 摘要 |
1,145,348. Coating with glass. INTERNATIONAL BUSINESS MACHINES CORP. 4 May, 1967 [31 May, 1966], No. 20682/67. Heading C1M. [Also in Divisions C7 and H1] A glass film is deposited on a semi-conductor surface, without damaging electrical components formed in the semi-conductor, by sputtering at a power density less than 4 watts per square inch across the anode and cathode which support a glow discharge in the sputtering chamber, then after an initial layer 200 Angstrom units thick has been deposited on the substrate the power density and rate of deposition are increased, as the substrate surface is by then shielded from the higher-energy particles which build up the remainder of the film. The sputtering chamber may be filled with Ar under reduced pressure, and the glow discharge may be concentrated by a magnetic field. Fused quartz, Si dioxide, or Si nitride may be applied instead of glass, and Ge, Si and Group III-V compounds may be employed as substrates. After application of a sputtered layer the surface of the coated semiconductor may be altered by annealing. |
