发明名称 |
Hafnium-containing material for film formation, method for producing the same, and method for producing hafnium-containing thin film using the same |
摘要 |
A hafnium-containing material is presented for forming a film having excellent vaporization stability and higher film formation rate. Also a method for producing the film is presented. The hafnium-containing material for film formation has a bond of a hafnium atom with a nitrogen atom, or a bond of a hafnium atom and an oxygen atoms. Zr content contained in the material is equal to or less than 650 ppm.
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申请公布号 |
US2005065358(A1) |
申请公布日期 |
2005.03.24 |
申请号 |
US20040939314 |
申请日期 |
2004.09.09 |
申请人 |
ITSUKI ATSUSHI;SOYAMA NOBUYUKI;YANAGISAWA AKIO |
发明人 |
ITSUKI ATSUSHI;SOYAMA NOBUYUKI;YANAGISAWA AKIO |
分类号 |
C23C16/40;C07F7/00;H01L21/316;(IPC1-7):C07F7/28 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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