发明名称 Hafnium-containing material for film formation, method for producing the same, and method for producing hafnium-containing thin film using the same
摘要 A hafnium-containing material is presented for forming a film having excellent vaporization stability and higher film formation rate. Also a method for producing the film is presented. The hafnium-containing material for film formation has a bond of a hafnium atom with a nitrogen atom, or a bond of a hafnium atom and an oxygen atoms. Zr content contained in the material is equal to or less than 650 ppm.
申请公布号 US2005065358(A1) 申请公布日期 2005.03.24
申请号 US20040939314 申请日期 2004.09.09
申请人 ITSUKI ATSUSHI;SOYAMA NOBUYUKI;YANAGISAWA AKIO 发明人 ITSUKI ATSUSHI;SOYAMA NOBUYUKI;YANAGISAWA AKIO
分类号 C23C16/40;C07F7/00;H01L21/316;(IPC1-7):C07F7/28 主分类号 C23C16/40
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