发明名称 |
Capacitor dielectric structure of a DRAM cell and method for forming thereof |
摘要 |
A capacitor dielectric structure of a deep trench capacitor for a DRAM cell. A semiconductor silicon substrate is provided wit a deep trench. Silicon nitride deposition is used to form a silicon nitride layer on the sidewall and bottom of the deep trench. An oxynitride process with wet oxidation and N2O reactive gas is used to form an oxynitride layer on the silicon nitride layer. A post oxynitride growth annealing is performed on the oxynitride layer.
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申请公布号 |
US2005062100(A1) |
申请公布日期 |
2005.03.24 |
申请号 |
US20040986877 |
申请日期 |
2004.11.15 |
申请人 |
PROMOS TECHNOLOGIES INC. |
发明人 |
WU YUNG-HSIEN;LEE CHENG-CHE |
分类号 |
H01L21/314;H01L21/318;H01L21/334;H01L21/8242;H01L27/108;(IPC1-7):H01L29/792;H01L29/76;H01L31/062 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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