发明名称 Method of manufacturing Er-doped silicon nano-dot array and laser ablation apparatus used therein
摘要 A laser ablation apparatus. A target has a silicon region and an erbium region divided in a chamber with a silicon substrate opposite to the target. A target rotating axis rotates the target to alternately radiate laser light onto the silicon region and the erbium region, a laser generator irradiates laser light for generating a plume by ablating silicon from the silicon region and erbium from the erbium region outside the chamber.
申请公布号 US2005061235(A1) 申请公布日期 2005.03.24
申请号 US20040979998 申请日期 2004.11.02
申请人 HA JEONG-SOOK;PARK KYOUNG-WAN;PARK SEUNG-MIN;PARK JONG-HYURK 发明人 HA JEONG-SOOK;PARK KYOUNG-WAN;PARK SEUNG-MIN;PARK JONG-HYURK
分类号 H01L21/203;C23C14/16;C23C14/28;(IPC1-7):H01S5/00;C30B1/00 主分类号 H01L21/203
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