发明名称 |
Method of manufacturing Er-doped silicon nano-dot array and laser ablation apparatus used therein |
摘要 |
A laser ablation apparatus. A target has a silicon region and an erbium region divided in a chamber with a silicon substrate opposite to the target. A target rotating axis rotates the target to alternately radiate laser light onto the silicon region and the erbium region, a laser generator irradiates laser light for generating a plume by ablating silicon from the silicon region and erbium from the erbium region outside the chamber.
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申请公布号 |
US2005061235(A1) |
申请公布日期 |
2005.03.24 |
申请号 |
US20040979998 |
申请日期 |
2004.11.02 |
申请人 |
HA JEONG-SOOK;PARK KYOUNG-WAN;PARK SEUNG-MIN;PARK JONG-HYURK |
发明人 |
HA JEONG-SOOK;PARK KYOUNG-WAN;PARK SEUNG-MIN;PARK JONG-HYURK |
分类号 |
H01L21/203;C23C14/16;C23C14/28;(IPC1-7):H01S5/00;C30B1/00 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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