METHOD FOR MANUFACTURING LAMINATION SOI WAFER, LAMINATION SOI WAFER MANUFACTURED BY THE METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a lamination SOI wafer that is not exposed while an entire buried oxide film layer is covered, and to provide the lamination SOI wafer.

SOLUTION: The method for manufacturing the lamination SOI wafer includes a process for forming a laminate by overlapping a semiconductor wafer and a support wafer via an oxide film (A), and a process for forming a thin-film single crystal silicon layer on a support wafer via the buried oxide film layer by thinning the semiconductor wafer to a specified thickness (B). In the method, the characteristic configuration (C) lies in the covering of the entire buried oxide film layer with a main surface at the overlapping side of the support wafer and the single crystal silicon layer. The entire buried oxide film layer is covered by removing an oxide film formed at the peripheral end and chamfering section on the main surface at a side for overlapping between the processes (A), (B), and allowing the oxide film to remain only on the overlapping surface excluding the peripheral end.

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