| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element capable of reducing the deterioration of the characteristics of elements due to cleavage. SOLUTION: This semiconductor element is provided with a mesa part 100 including an n-type layer 2, an i-type layer 3 and a p-type layer 4 on a semiconductor substrate 1, wherein one end face of the mesa part 100 is formed of cleavage. This semiconductor element is provided with an insulating film 5 covering the mesa part 100 and a reinforcement film 7 arranged on the insulating film 5 for reinforcing strength to the cleavage of the mesa part 100. COPYRIGHT: (C)2005,JPO&NCIPI
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