发明名称 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND CAMERA
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device that facilitates the perfect transfer and perfect readout of charge without deteriorating image quality. SOLUTION: The semiconductor device has a transfer channel 12 for transferring charge accumulated by photoelectric conversion, an insulating film 13 formed on the transfer channel 12, and a transfer electrode 15 for applying a transfer voltage to the transfer channel 12 via the insulating film 13, wherein the insulating film 13 has a first thickness and a second thickness smaller than the first thickness, the thickness of the insulating film 13 is the first thickness below the end of the transfer electrode 15 in a direction perpendicular to the transfer direction of the transfer channel 12, and the thickness of the insulating film 13 is the second thickness over a central portion of the transfer channel 12 in the direction perpendicular to the transfer direction of the transfer channel 12. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005079567(A) 申请公布日期 2005.03.24
申请号 JP20030312253 申请日期 2003.09.04
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 TANAKA KOJI
分类号 H01L21/00;H01L21/339;H01L27/14;H01L27/148;H01L29/76;H04N5/225;H04N5/335;H04N5/357;H04N5/372;(IPC1-7):H01L27/148 主分类号 H01L21/00
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