Apparatus and method for metal plasma immersion ion implantation and metal plasma immersion ion deposition

摘要

This invention is a method for metal plasma ion implantation and metal plasma ion deposition, comprising: providing a vacuum chamber with at least one workpiece having a surface positioned on a worktable within the vacuum chamber; reducing the pressure in the vacuum chamber; generating a plasma of metal ions within the vacuum chamber, applying a negative bias to the worktable to thereby accelerate metal ions from the plasma toward at least one workpiece to thereby either implant metal ions into or deposit metal ions onto the workpiece or both. This invention includes an apparatus for metal ion implantation and metal ion plasma deposition, comprising: a vacuum chamber, a metal plasma generator within the vacuum chamber, and at least one worktable within the vacuum chamber.