发明名称 PLASMA ETCHING METHOD OF SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To start discharging stably in plasma etching which uses He gas. <P>SOLUTION: In plasma etching which uses such gas that is mainly formed of He gas and is added with O2 gas, Cl2 gas is added in an initial stage of plasma discharging, and thereafter, supply of the Cl2 gas is stopped. Moreover, a little amount of Cl2 gas is added before starting of the discharging, and then discharging is started. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005079234(A) 申请公布日期 2005.03.24
申请号 JP20030305944 申请日期 2003.08.29
申请人 OKI ELECTRIC IND CO LTD 发明人 KOMAGATA SHOGO
分类号 H05H1/46;H01L21/3065;H01L21/311 主分类号 H05H1/46
代理机构 代理人
主权项
地址