| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition which is superior in transmission of radiation and dry etching resistance and used for far-ultraviolet rays, such as those of KrF and ArF excimer lasers and vacuum ultraviolet rays, such as those of F<SB>2</SB>excimer laser. <P>SOLUTION: The resist composition contains a fluorine polymer (A), having an acidic group blocked with an organic group containing one or more fluorine atoms, and an acidic group which is not blocked, an acid generating compound (B) for generating acid by receiving light irradiation, and an organic solvent (C). <P>COPYRIGHT: (C)2005,JPO&NCIPI |
