发明名称 |
PROCESSING METHOD OF SINGLE CRYSTAL SUBSTRATE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a processing method of a single crystal substrate for forming a fine through-hole or non-through-hole having a high aspect ratio to a substrate constituted of a material comprising a single crystal. <P>SOLUTION: This processing method is constituted so as to form the through-hole 2 to the substrate 1 constituted of the material comprising the single crystal along a predetermined route 8 and has laser irradiation process [Figs. (b)-(d)] for irradiating the substrate 1 with a laser beam to modify the material of the substrate 1 along the predetermined route 8 to form a material modified part 7 and an anisotropic etching process [Fig. (e)] for etching the material modified part 7 to form the through-hole 2 along the predetermined route 8. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
申请公布号 |
JP2005074663(A) |
申请公布日期 |
2005.03.24 |
申请号 |
JP20030304660 |
申请日期 |
2003.08.28 |
申请人 |
SEIKO EPSON CORP |
发明人 |
UMETSU KAZUNARI;YOSHIMURA KAZUTO;SAWAKI DAISUKE;YAMAZAKI YUTAKA |
分类号 |
B28D5/00;B23K26/00;B23K101/40;(IPC1-7):B28D5/00 |
主分类号 |
B28D5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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