发明名称 PROCESSING METHOD OF SINGLE CRYSTAL SUBSTRATE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a processing method of a single crystal substrate for forming a fine through-hole or non-through-hole having a high aspect ratio to a substrate constituted of a material comprising a single crystal. <P>SOLUTION: This processing method is constituted so as to form the through-hole 2 to the substrate 1 constituted of the material comprising the single crystal along a predetermined route 8 and has laser irradiation process [Figs. (b)-(d)] for irradiating the substrate 1 with a laser beam to modify the material of the substrate 1 along the predetermined route 8 to form a material modified part 7 and an anisotropic etching process [Fig. (e)] for etching the material modified part 7 to form the through-hole 2 along the predetermined route 8. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2005074663(A) 申请公布日期 2005.03.24
申请号 JP20030304660 申请日期 2003.08.28
申请人 SEIKO EPSON CORP 发明人 UMETSU KAZUNARI;YOSHIMURA KAZUTO;SAWAKI DAISUKE;YAMAZAKI YUTAKA
分类号 B28D5/00;B23K26/00;B23K101/40;(IPC1-7):B28D5/00 主分类号 B28D5/00
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