发明名称 FERROELECTRIC FILM, FERROELECTRIC CAPACITIVE ELEMENT, AND MANUFACTURING METHOD OF THEM
摘要 PROBLEM TO BE SOLVED: To provide a ferroelectric, capable of preventing a polarization property of a ferroelectric capacitor to a crystal grain size difference of the ferroelectric from deteriorating and which will not produce deterioration, even if a capacitor size is reduced accompanying microfabrication of a device, a capacitive element using the ferroelectric, and to provide a method of manufacturing the ferroelectric and the capacitive element. SOLUTION: The ferroelectric capacitive element is provided with an insulating film 13a formed on a substrate 1, a lower electrode 5 embedded in the insulating film 13a so that at least a part of a front surface of the lower electrode 5 is exposed, a ferroelectric film 12 formed so as to extend over the insulating film 13a and the lower electrode 5, and an upper electrode 7 formed on the ferroelectric film 12. A crystal grain size of the ferroelectric film 12 is formed almost uniformly on the insulating film 13a contacting with the ferroelectric and on the lower electrode 5. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005079538(A) 申请公布日期 2005.03.24
申请号 JP20030311724 申请日期 2003.09.03
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HAYASHI SHINICHIRO;NASU TORU
分类号 C23C28/00;H01L21/8246;H01L27/105;(IPC1-7):H01L27/105 主分类号 C23C28/00
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