发明名称 |
Method of forming an ultrathin nitride/oxide stack as a gate dielectric |
摘要 |
A method of forming a final stacked gate dielectric comprising the following steps. A substrate is provided and an oxide layer is formed upon the substrate. A nitride layer is formed upon the oxide layer. The oxide layer and the nitride layer comprising an initial stacked gate dielectric. The initial stacked gate dielectric is subjected to a plasma nitridation process under an N-containing ambient to form an intermediate stacked gate dielectric. The intermediate stacked gate dielectric is subjected to a plasma reoxidation process to form the final stacked gate dielectric.
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申请公布号 |
US2005064109(A1) |
申请公布日期 |
2005.03.24 |
申请号 |
US20030666359 |
申请日期 |
2003.09.19 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO. |
发明人 |
CHEN CHI-CHUN;LEE TZE-LIANG;CHEN SHIH-CHANG |
分类号 |
H01L21/314;(IPC1-7):H05H1/24 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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