发明名称 Spacer chalcogenide memory method
摘要 The present invention includes devices and methods to form memory cell devices including a spacer comprising a programmable resistive material alloy. Particular aspects of the present invention are described in the claims, specification and drawings.
申请公布号 US2005062074(A1) 申请公布日期 2005.03.24
申请号 US20040983375 申请日期 2004.11.08
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 LUNG HSIANG LAN
分类号 H01L27/24;H01L45/00;(IPC1-7):H01L29/768 主分类号 H01L27/24
代理机构 代理人
主权项
地址