发明名称 |
Spacer chalcogenide memory method |
摘要 |
The present invention includes devices and methods to form memory cell devices including a spacer comprising a programmable resistive material alloy. Particular aspects of the present invention are described in the claims, specification and drawings.
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申请公布号 |
US2005062074(A1) |
申请公布日期 |
2005.03.24 |
申请号 |
US20040983375 |
申请日期 |
2004.11.08 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUNG HSIANG LAN |
分类号 |
H01L27/24;H01L45/00;(IPC1-7):H01L29/768 |
主分类号 |
H01L27/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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