MAGNETORESISTIVE RAM DEVICE AND METHODS FOR FABRICATING
摘要
A method for fabricating an MRAM device structure (10) includes providing a substrate (12) on which is formed a first transistor (14) and a second transistor (14). An operative memory element device (60) is formed in electrical contact with the first transistor (14). At least a portion of a false memory element device (58) is formed in electrical contact with the second transistor (14). A first dielectric layer (62) is deposited overlying the at least a portion of a false memory element device and the operative memory element device. The first dielectric layer is etched to simultaneously form a first via (66) to the at least a portion of a false memory element device (58) and a second via (64) to the operative memory element device (60). An electrically conductive interconnect layer (68) is deposited so the electrically conductive interconnect layer extends from the at least a portion of a false memory element device (58) to the operative memory element device (64).
申请公布号
WO2004095459(A3)
申请公布日期
2005.03.24
申请号
WO2004US11864
申请日期
2004.04.16
申请人
FREESCALE SEMICONDUCTOR, INC.;GRYNKEWICH, GREGORY;DEHERRERA, MARK;DURLAM, MARK, A.;TRACY, CLARENCE, J.
发明人
GRYNKEWICH, GREGORY;DEHERRERA, MARK;DURLAM, MARK, A.;TRACY, CLARENCE, J.