发明名称 |
MEMORY WITH UNIFORM READ AND VERIFICATION THRESHOLD |
摘要 |
A plurality of cells in a flash memory device are coupled together in a series configuration, as in a NAND flash memory. A position of a first accessed cell is determined with reference to a ground potential in the flash memory device. A first word line signal is coupled to the first accessed cell. The first word line signal voltage level is adjusted in response to the position of the first accessed cell in its series of cells. |
申请公布号 |
WO2004102580(A3) |
申请公布日期 |
2005.03.24 |
申请号 |
WO2004US14248 |
申请日期 |
2004.05.07 |
申请人 |
MICRON TECHNOLOGY, INC.;ROOHPARVAR, FRANKIE |
发明人 |
ROOHPARVAR, FRANKIE |
分类号 |
G11C16/04;G11C16/08 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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