发明名称 CLEANING METHOD OF DEPOSITING EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide a cleaning method of depositing equipment capable of reducing the residual quantity of cleaning gas containing fluorine gas and fluorinated hydrogen gas for the structural components of the depositing equipment. SOLUTION: In the cleaning method of depositing equipment, depositing equipment having structural components made of quartz is used for forming a silicon based thin film and then silicon based deposits on the structural components are removed. While supplying cleaning gas containing fluorine gas and fluorinated hydrogen gas into the depositing equipment, the silicon based deposits are cleaned off by heating the structural components made of quartz and then cleaning gas supply is stopped and cleaning is ended at a temperature higher than 300°C. When cleaning is ended, the structural components made of quartz has a temperature exceeding 300°C. Subsequently, the structural components made of quartz is sustained at a temperature exceeding 300°C for at least 10 min by degassing treatment. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005079123(A) 申请公布日期 2005.03.24
申请号 JP20030209692 申请日期 2003.08.29
申请人 TOSHIBA CORP;L'AIR LIQUIDE SA POUR L'ETUDE & L'EXPLOITATION DES PROCEDE S GEORGES CLAUDE 发明人 TAMAOKI NAOKI;SATO HIROSUKE;MOMOTA KAYO;KIMURA TAKAKO
分类号 C23C16/44;H01L21/31;(IPC1-7):H01L21/31 主分类号 C23C16/44
代理机构 代理人
主权项
地址