发明名称 |
Method for forming a semiconductor device having isolation regions |
摘要 |
A method for forming a semiconductor device having isolation structures decreases leakage current. A channel isolation structure decreases leakage current through a channel structure. In addition, current electrode dielectric insulation structures are formed under current electrode regions to prevent leakage between the current electrodes.
|
申请公布号 |
US2005064669(A1) |
申请公布日期 |
2005.03.24 |
申请号 |
US20030668714 |
申请日期 |
2003.09.23 |
申请人 |
ORLOWSKI MARIUS K.;BARR ALEXANDER L. |
发明人 |
ORLOWSKI MARIUS K.;BARR ALEXANDER L. |
分类号 |
H01L21/336;H01L21/762;H01L29/78;(IPC1-7):H01L21/336;H01L21/76 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|