Infrared sensor device and manufacturing method thereof

摘要

A supporting beam line for supporting, afloat in a cavity on a semiconductor substrate, an infrared detection pixel comprising an infrared absorption portion for absorbing an incident infrared ray and converting it into heat and a thermoelectric conversion portion for converting a temperature change caused by the heat generated in the infrared absorption portion into an electric signal is formed by a damascene metal on the same layer as the gate of a damascene metal gate MOS transistor to be used in a peripheral circuit. The supporting beam line comprises a conductor line with U-shaped cross section inside which a metal is filled.