发明名称 |
Dual magnetic tunnel junction sensor with a longitudinal bias stack |
摘要 |
A dual magnetic tunnel junction (MTJ) sensor is provided with a longitudinal bias stack sandwiched between a first MTJ stack and a second MTJ stack. The longitudinal bias stack comprises an antiferromagnetic (AFM) layer sandwiched between first and second ferromagnetic layers. The first and second MTJ stacks comprise antiparallel (AP)-pinned layers pinned by AFM layers made of an AFM material having a higher blocking temperature than the AFM material of the bias stack allowing the AP-pinned layers to be pinned in a transverse direction and the bias stack to be pinned in a longitudinal direction. The demagnetizing fields of the two AP-pinned layers cancel each other and the bias stack provides flux closures for the sense layers of the first and second MTJ stacks.
|
申请公布号 |
US2005061658(A1) |
申请公布日期 |
2005.03.24 |
申请号 |
US20040981926 |
申请日期 |
2004.11.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LIN TSANN;MAURI DANIELE |
分类号 |
G01R33/09;G11B5/39;(IPC1-7):G11B5/127;B05D3/02;C23C14/00 |
主分类号 |
G01R33/09 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|