| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoresist base enabling ultra-fine processing with extreme ultraviolet radiation or the like, and to provide a method for refining the same, and to provide a photoresist composition. <P>SOLUTION: The photoresist base comprises an extreme ultraviolet radiation-reactive organic compound of the general formula(1)( wherein, A is a central structure composed of 1-50C aliphatic group(s), 6-50C aromatic group(s), organic group(s) containing these groups at the same time or a cyclic-structured organic group where these groups are repeated; B to D are each an extreme ultraviolet radiation-reactive group, a group reactive to the action of a chromophore active to extreme ultraviolet radiation, a 1-50C aliphatic group or 6-50 aromatic group each containing these reactive groups, an organic group containing the above aliphatic or aromatic group at the same time or a substituent of branched structure; X to Z are each a single bond or ether linkage; l to n are each an integer of 0-5 meeting the relationship:l+m+n≥1; wherein A to D may each contain a heteroatom-bearing substituent ). <P>COPYRIGHT: (C)2005,JPO&NCIPI |
