| 摘要 |
PROBLEM TO BE SOLVED: To prevent the deterioration in mobility, while maintaining high the dielectric constant of a high-k gate insulating film. SOLUTION: A metallic film 12 is formed on a silicon substrate 1 in an atmosphere substantially containing no oxygen. A metallic oxide film 2, as a gate insulating film, is formed by oxidizing the metallic film 12 in the atmosphere containing oxygen. A silicon oxide film as an interface layer 3 is formed by oxidizing the surface of the silicon substrate 1, when the metallic oxide film 2 is formed. COPYRIGHT: (C)2005,JPO&NCIPI
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