SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing parasitic resistance and parasitic inductance from being added to a guard ring and preventing the guard ring from restricting a wiring layout, and also to provide a method of fabricating the semiconductor. SOLUTION: An epitaxial layer 3 of resistivity 10Ωcm is formed on a p-type substrate 2 of resistivity 0.1Ωcm to measure 3 to 5μm thick, followed by providing a multi-wiring-layer 4 on the epitaxial layer 3. Internal circuits 5a and 5b are formed to be spaced apart from each other on the surface of the epitaxial layer 3 and in the multi-wiring-layer 4, and the epitaxial layer 3 has a p+diffusion region 9 formed to surround the internal circuit 5b. The top end of the p+diffusion region 9 is connected to a contact 11 of the multi-wiring-layer 4 and the bottom end thereof is connected to the p-type substrate 2. Further, the ground potential is applied to the p+diffusion region 9 by way of a ground-potential wiring GND, the contact 11, a p+diffusion region 10 and the p-type substrate 2. COPYRIGHT: (C)2005,JPO&NCIPI