| 摘要 |
PROBLEM TO BE SOLVED: To provide a film-forming method capable of preventing the peel-off between films even if a Ti film formation is at low temperature, when film-forming a Ti film by CVD before film-forming other films, such as a TiN film. SOLUTION: The film-forming method includes a process for film-forming the Ti film on a substrate to be treated (STEP 2), a process for oxidizing the surface of the Ti film (STEP 3), and a process for film-forming the TiN film on it by the CVD (STEP 5). COPYRIGHT: (C)2005,JPO&NCIPI
|
