| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is superior in high-frequency operation by reducing the junction capacity between a collector and a substrate, and provide a method for manufacturing the semiconductor device. SOLUTION: This semiconductor device is a one having a function as a bipolar transistor having an emitter layer, a base layer, and a collector layer, and has an n<SP>-</SP>type Si layer 201 having nearly the same impurity density with the semiconductor substrate below an n<SP>+</SP>buried layer 101. The method for manufacturing the semiconductor device is a one for manufacturing the semiconductor device having the function as a bipolar transistor having an emitter layer, a base layer, and a collector layer, and the n<SP>-</SP>type Si layer 201 which is positioned below the n<SP>+</SP>buried layer 101 and has nearly the same impurity density with the semiconductor substrate is formed by using ion injection. By these means, the junction capacity between the buried layer and substrate is reduced to improve high frequency characteristics. COPYRIGHT: (C)2005,JPO&NCIPI
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