发明名称 FIELD EFFECT TRANSISTOR AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a field effect transistor exhibiting high field effect mobility. SOLUTION: In the field effect transistor having an organic semiconductor layer, the organic semiconductor layer contains at least tetrapod benzo copper porphyrin crystal. In CuKαX ray diffraction, the transistor has a peak at at least two among Bragg angles (2θ) 8.4°±0.2°, 10.2°±0.2°, 11.8°±0.2°and 16.9°±0.2°. The tetrapod benzo copper porphyrin crystal consists of compound expressed by general Formula (1), where R<SB>2</SB>is hydrogen atom, halogen atom, hydroxyl group or alkyl group of carbon number of 1 or more or 12 or less, oxyalkyl group, thio alkyl group, alkyl ester group, and R<SB>3</SB>is hydrogen atom or aryl group. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005079204(A) 申请公布日期 2005.03.24
申请号 JP20030305487 申请日期 2003.08.28
申请人 CANON INC 发明人 MIURA DAISUKE;NAKAYAMA HIROHARU;ONISHI TOSHINOBU;KUBOTA JUN
分类号 H01L51/05;C07D487/22;H01L21/336;H01L29/786;H01L51/30;(IPC1-7):H01L29/786;H01L51/00 主分类号 H01L51/05
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