METHOD OF MANUFACTURING CRYSTALLINE SEMICONDUCTOR FILM, METHOD OF MANUFACTURING THIN-FILM TRANSISTOR HAVING THE SEMICONDUCTOR FILM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING THE SEMICONDUCTOR FILM

摘要

PROBLEM TO BE SOLVED: To provide a new method of manufacturing crystalline semiconductor film, by which the positions of crystal grains and crystal grain boundaries can be controlled and, in particular, the orientational properties of crystal grains are controlled. SOLUTION: The method of manufacturing crystalline semiconductor film includes a step of forming the metallic elements of an amorphous semiconductor film on the bottom face of an opening formed in an insulating film by controlling the forming position of the opening; a step of forming the amorphous semiconductor film so as to cover the opening and insulating film; and a step of forming a region in which the crystallization of the amorphous semiconductor film is fastened by the metallic element, namely, the crystallization of the amorphous semiconductor film is started at a low temperature, by controlling a crystalline semiconductor film as a seed crystal region. COPYRIGHT: (C)2005,JPO&NCIPI