发明名称 METHOD OF CONTROLLING IMPURITY DOPING AND IMPURITY DOPING APPARATUS
摘要 <p>A control method for introducing a dopant being an impurity in treatment subject (1) with the use of plasma, comprising measuring, during doping, the temperature of treatment subject (1), amount of impurity-containing ion in the plasma colliding with the treatment subject (1) and gas species of the plasma; calculating the dose amount of treatment subject doping by ion from the dose amount of treatment subject doping by neutral gas among impurity-containing gas species that are present in the plasma in conformity with the temperature of the treatment subject (1) and the amount of impurity-containing ion colliding with the treatment subject (1); and carrying out doping so that the sum of dose amount by neutral gas and dose amount by ion becomes a preset dose amount.</p>
申请公布号 WO2005027208(A1) 申请公布日期 2005.03.24
申请号 WO2004JP13260 申请日期 2004.09.06
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;SASAKI, YUICHIRO;NAKAYAMA, ICHIRO;OKUMURA, TOMOHIRO;MAESHIMA, SATOSHI 发明人 SASAKI, YUICHIRO;NAKAYAMA, ICHIRO;OKUMURA, TOMOHIRO;MAESHIMA, SATOSHI
分类号 H01L21/265;(IPC1-7):H01L21/265 主分类号 H01L21/265
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