METHOD OF CONTROLLING IMPURITY DOPING AND IMPURITY DOPING APPARATUS
摘要
<p>A control method for introducing a dopant being an impurity in treatment subject (1) with the use of plasma, comprising measuring, during doping, the temperature of treatment subject (1), amount of impurity-containing ion in the plasma colliding with the treatment subject (1) and gas species of the plasma; calculating the dose amount of treatment subject doping by ion from the dose amount of treatment subject doping by neutral gas among impurity-containing gas species that are present in the plasma in conformity with the temperature of the treatment subject (1) and the amount of impurity-containing ion colliding with the treatment subject (1); and carrying out doping so that the sum of dose amount by neutral gas and dose amount by ion becomes a preset dose amount.</p>
申请公布号
WO2005027208(A1)
申请公布日期
2005.03.24
申请号
WO2004JP13260
申请日期
2004.09.06
申请人
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;SASAKI, YUICHIRO;NAKAYAMA, ICHIRO;OKUMURA, TOMOHIRO;MAESHIMA, SATOSHI