| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile DRAM in which, even if supply of power source is interrupted, data can be kept and which can be operated at high speed as the DRAM, and its driving method. <P>SOLUTION: Each of a plurality of unit cells is provided with a transistor provided with a floating gate 32, a control gate 34, a first junction region 35, and a second junction region 36 and a capacitor Cap connected between the second junction region 36 of the transistor and a plate electrode power source end Vcp, at the time of power-off, data are held by accumulating selectively electric charges in respective floating gate 32, at the time of power-on, data are preserved by accumulating selectively electric charges in respective capacitor Cap. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
