| 摘要 |
PROBLEM TO BE SOLVED: To enable the fabrication of an organic thin film transistor of high performance and high definition at a high productivity rate and a low production cost and also enable an application to an active matrix thin film transistor substrate such as a liquid display device etc. SOLUTION: A self-assembled monolayer film is arranged in a gate electrode-projected region on the surface of a insulation film selectively and with high definition, thereby selectively improving the orientation order of an organic semiconductor film only in the gate electrode-projected region without improving the order in a light-irradiated portion outside the gate electrode-projected region. A thin film transistor provided with a gate electrode, a gate insulation film, a source electrode, a drain electrode, a semiconductor film and a protective film stacked on a substrate is characterized in that the semiconductor film is made up of an aggregation of organic semiconductor molecules and the orientation order of the organic semiconductor molecules of the above semiconductor film portion formed within the gate electrode-projected region of the surface of the insulation film is higher than the orientation order of the above-described semiconductor film portion formed outside the relevant region. COPYRIGHT: (C)2005,JPO&NCIPI
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